Semiconductor device and method of forming the semiconductor device

ABSTRACT

A semiconductor device includes an n-type field effect transistor (nFET) including a first fin and a first metal gate formed on the first fin, and a p-type field effect transistor (pFET) including a second fin and a second metal gate formed on the second fin, a thickness of the second metal gate being substantially the same as a thickness of the first metal gate.

The present Application is a Divisional Application of U.S. patent application Ser. No. 15/279,148, which was filed on Sep. 28, 2016.

BACKGROUND

The present invention relates generally to a semiconductor device and method of forming the semiconductor device, and more particularly, a semiconductor device in which a thickness of a metal gate of an nFET is substantially the same as a thickness of a metal gate of the pFET.

High-k metal gate (HKMG) technology incorporates a high-k dielectric, and a metal gate instead of a polysilicon gate. HKMG technology reduces gate leakage, thereby increasing the transistor capacitance and allowing chips to function with reduced power needs.

A related art semiconductor device (e.g., a complementary metal oxide semiconductor (CMOS) device) includes vertical transport field-effect transistors (VTFETs) which utilize HKMG technology. The VTFETs include a bottom source/drain (S/D), a semiconductor fin formed on the bottom S/D, a metal gate formed on a side of the fin, and a high-k dielectric formed between the fin and the metal gate.

SUMMARY

An exemplary aspect of the present invention is directed to a method of forming a semiconductor device. The method includes forming a first work function metal and sacrificial layer on an n-type field effect transistor (nFET) and on a p-type field effect transistor (pFET), removing the sacrificial layer and the first work function metal from one of the nFET and the pFET, forming a second work function metal on the one of the nFET and the pFET, a thickness of the second work function metal being substantially the same as a thickness of the first work function metal, and removing the sacrificial layer from the other of the nFET and the pFET.

Another exemplary aspect of the present invention is directed to a semiconductor device. The device includes an n-type field effect transistor (nFET) including a first fin and a first metal gate formed on the first fin, and a p-type field effect transistor (pFET) including a second fin and a second metal gate formed on the second fin, a thickness of the second metal gate being substantially the same as a thickness of the first metal gate.

Another exemplary aspect of the present invention is directed to a method of forming a semiconductor device. The method includes forming a high-k dielectric layer on a fin of an n-type field effect transistor (nFET) and on a fin of a p-type field effect transistor (pFET), forming a first work function metal and sacrificial layer on the high-k dielectric layer on the fin of the nFET and the fin of the pFET, masking one of the nFET and the pFET, removing the sacrificial layer and the first work function metal from the other of the nFET and the pFET, forming a second work function metal on the nFET and the pFET, a thickness of the second work function metal being substantially the same as a thickness of the first work function metal, masking the other of the nFET and the pFET, and removing the second work function metal and the sacrificial layer on the one of the nFET and the pFET.

With its unique and novel features, the exemplary aspects of the present invention may provide a semiconductor device in which a thickness of a metal gate of an nFET is substantially the same as a thickness of a metal gate of the pFET.

BRIEF DESCRIPTION OF THE DRAWINGS

The exemplary aspects of the present invention will be better understood from the following detailed description of the exemplary embodiments of the invention with reference to the drawings, in which:

FIG. 1 illustrates a method 100 of forming a semiconductor device, according to an exemplary aspect of the present invention.

FIG. 2A illustrates a semiconductor device 200 a having an underlapped pattern, according to an exemplary aspect of the present invention.

FIG. 2B illustrates a semiconductor device 200 b having a pFET-first, overlapped pattern, according to an exemplary aspect of the present invention.

FIG. 2C illustrates a semiconductor device 200 c having an nFET-first, overlapped pattern, according to an exemplary aspect of the present invention.

FIG. 3 is a flow chart for a method 300 of forming a semiconductor device having a pFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

FIG. 4A illustrates (e.g., after performing a reliability strip) the forming of a high-k layer 407 (e.g., HfO₂, etc.) on the bottom spacer 403 (e.g., SiO₂, SiN, etc.), the fins 401 a, 401 b, the oxide layer 419 a, 419 b (e.g., SiO₂), and the hard mask (e.g., SiN) 408 a, 408 b, according to an exemplary aspect of the present invention.

FIG. 4B illustrates the forming of the pFET WFM 402/402 b (e.g., TiN) (e.g., which becomes the metal gate 402 b of the pFET) on the high-k dielectric layer 407, according to an exemplary aspect of the present invention.

FIG. 4C illustrates the forming of the sacrificial layer 405 on the pFET WFM 402/402 b, and the forming of the sacrificial cap layer 406 on the sacrificial layer 405, according to an exemplary aspect of the present invention.

FIG. 4D illustrates the forming of a mask 409 on the pFET, according to an exemplary aspect of the present invention.

FIG. 4E illustrates the removing (e.g., stripping, etching away etc.) of the sacrificial cap layer 406, the sacrificial layer 405, and the pFET WFM 402/402 b on the nFET, according to an exemplary aspect of the present invention.

FIG. 4F illustrates the forming of an nFET WFM stack 402/402 a (which later becomes the metal gate 402 a of the nFET) on the high-k dielectric layer 407 on the nFET, according to an exemplary aspect of the present invention.

FIG. 4G illustrates the forming of a mask 410 on the nFET, according to an exemplary aspect of the present invention.

FIG. 4H illustrates the removing (e.g., stripping, etching away etc.) of the nFET WFM 402/402 a and the sacrificial cap layer 406 on the pFET, forming the metal gate 402 a for the nFET and the metal gate 402 b for the pFET, according to an exemplary aspect of the present invention.

FIG. 4I illustrates the removing of the sacrificial layer 405 from the pFET, exposing the metal gate 402 b, according to an exemplary aspect of the present invention.

FIG. 4J illustrates the removing of the mask 410 to expose the metal gate 402 a (e.g., after patterning), according to an exemplary aspect of the present invention.

FIG. 4K illustrates the forming of a common metal layer 411 on the nFET and pFET, and inside the gap according to an exemplary aspect of the present invention.

FIG. 4L illustrates the forming of an organic planarization layer (OPL) 412 on the nFET and pFET, and the recessing of the OPL 412, such as by wet etch (or dry etch), according to an exemplary aspect of the present invention.

FIG. 4M illustrates the recessing of the metal gates 402 a, 402 b by wet etch (or dry etch), according to an exemplary aspect of the present invention.

FIG. 4N illustrates the removal of the OPL 412, exposing the common metal layer 411, according to an exemplary aspect of the present invention.

FIG. 4O illustrates the forming of an encapsulation layer 413 (e.g., SiN) on the nFET and pFET, according to an exemplary aspect of the present invention.

FIG. 4P illustrates the forming of a gap oxide fill 414 (e.g., SiO₂) on the encapsulation layer 413, according to an exemplary aspect of the present invention.

FIG. 4Q illustrates a recessing of the gap oxide fill 414 (e.g., by wet or dry etching) and the forming (e.g., by deposition) of a top spacer 415 (e.g., SiN), according to an exemplary aspect of the present invention.

FIG. 4R illustrates the etching (e.g., dry etching) of the top spacer 415 to form a self-alignment gate and expose the gap oxide fill 414, according to an exemplary aspect of the present invention.

FIG. 4S illustrates the forming of a shared gate protection hard mask 416 on the nFET and pFET, according to an exemplary aspect of the present invention.

FIG. 4T illustrates the etching of the self-alignment gate, to expose the bottom spacer 403, according to an exemplary aspect of the present invention.

FIG. 4U illustrates the forming of a gap oxide fill 418 (e.g., SiO₂), according to an exemplary aspect of the present invention.

FIG. 4V illustrates the planarization (e.g., chemical mechanical planarization (CMP)) of the gap oxide fill 418 to expose a surface of the encapsulation layer 413, according to an exemplary aspect of the present invention.

FIG. 4W illustrates an etching (e.g., nitride and oxide non-selective etch) of the top spacer 415, the gap oxide fill 418, the hard mask 408 a, 408 b, the oxide layer 419 a, 419 b, and the encapsulation layer 413 to expose the upper surface of the fins 401 a, 401 b, according to an exemplary aspect of the present invention.

FIG. 4X illustrates the forming of the epitaxial growth of the top source/drain layers 420 a, 420 b (e.g., n-type epitaxial grown on the nFET and p-type epitaxial growth on the pFET), according to an exemplary aspect of the present invention.

FIG. 4Y illustrates the forming of a top source/drain silicide 421 a, 421 b, and the forming of an oxide fill 422, according to an exemplary aspect of the present invention.

FIG. 4Z illustrates the forming of contacts 423, according to an exemplary aspect of the present invention.

FIG. 5 is a flow chart for a method 500 of forming a semiconductor device having nFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

FIG. 6 is a flow chart for a method 600 of forming a semiconductor device having a pFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

FIGS. 7A-7O illustrate a method 700 of forming a semiconductor device with a pFET-first underlapped pattern, according to another exemplary aspect of the present invention.

FIG. 7B illustrates the forming of the pFET WFM 702/702 b (e.g., TiN) (e.g., which becomes the metal gate 702 b of the pFET) on the high-k dielectric layer 707, according to an exemplary aspect of the present invention.

FIG. 7C illustrates the forming of the sacrificial layer 705 on the pFET WFM 702/702 b, and the forming of the sacrificial cap layer 706 on the sacrificial layer 705, according to an exemplary aspect of the present invention.

FIG. 7D illustrates the forming of a mask 709 (e.g., photoresist or OPL) on the pFET, according to an exemplary aspect of the present invention.

FIG. 7E illustrates the removing (e.g., stripping, etching away etc.) of the sacrificial cap layer 706 on the nFET, according to an exemplary aspect of the present invention.

FIG. 7F illustrates the removing of the mask 709 to expose the sacrificial cap layer 706 on the pFET, according to an exemplary aspect of the present invention.

FIG. 7G illustrates the removing of the sacrificial cap layer 706 from the pFET to expose the sacrificial layer 705, and removing the sacrificial layer and pFET WFM from the nFET to expose the high-k dielectric layer 707, according to an exemplary aspect of the present invention.

FIG. 7H illustrates the forming of the nFET WFM 702/702 a on the nFET and pFET, according to an exemplary aspect of the present invention.

FIG. 7I illustrates the forming a mask 710 on the nFET, according to an exemplary aspect of the present invention.

FIG. 7J illustrates the removing (e.g., stripping, etching away etc.) of the nFET WFM 702/702 a on the pFET, according to an exemplary aspect of the present invention.

FIG. 7K illustrates the removing of the mask 710 to expose the metal gate 702 a (e.g., after patterning), according to an exemplary aspect of the present invention.

FIG. 7L illustrates the removing of the sacrificial layer 705 on the pFET to expose the metal gate 702 b, according to an exemplary aspect of the present invention.

FIG. 7M illustrates the forming of a common metal layer 711 on the nFET and pFET, and inside the gap according to an exemplary aspect of the present invention.

FIG. 7N illustrates the device formed by the method 700 after formation of the contacts 723, according to an exemplary aspect of the present invention.

FIG. 7O illustrates a semiconductor device 750 having a pFET-first, overlapped pattern, according to an exemplary aspect of the present invention.

FIG. 8 is a flow chart for a method 800 of forming a semiconductor device having an nFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

FIG. 9 illustrates a semiconductor device 700 having an nFET-first, overlapped pattern, according to an exemplary aspect of the present invention.

FIG. 10 is a flow chart for a method 1000 of forming a semiconductor device having a pFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

FIG. 11 is a flow chart for a method 1100 of forming a semiconductor device having nFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

DETAILED DESCRIPTION

The invention will now be described with reference to FIGS. 1-11, in which like reference numerals refer to like parts throughout. It is emphasized that, according to common practice, the various features of the drawing are not necessarily to scale. On the contrary, the dimensions of the various features can be arbitrarily expanded or reduced for clarity. Exemplary embodiments are provided below for illustration purposes and do not limit the claims. Achieving an equal gate thickness is important to forming an HKMG semiconductor device, in particular, in the VTFETs is very critical to forming HKMG CMOS. However, the related art methods do not provide VTFETs with an equal gate thickness.

In contrast to the related art methods, the exemplary aspects of the present invention may provide a semiconductor device with VTFETs having substantially the same (e.g., equal) gate thickness. That is, a thickness of a gate for the p-type FET may have substantially the same thickness as a gate for the n-type FET in the semiconductor device formed according to an exemplary aspect of the present invention.

The terms “same”, “equal”, “same thickness” and “equal thickness” should be understood to mean plus-or-minus 10%. Thus, for example where a thickness of the gate of the p-type FET is 20 nm, a thickness of the gate of the n-type FET may be considered to be the “same thickness” as the thickness of the p-type FET if the thickness of the gate is from 18 nm to 22 nm.

Referring again to the drawings, FIG. 1 illustrates a method 100 of forming a semiconductor device, according to an exemplary aspect of the present invention.

As illustrated in FIG. 1, the method 100 includes forming (110) a first work function metal and sacrificial layer on an n-type field effect transistor (nFET) and on a p-type field effect transistor (pFET), removing (120) the sacrificial layer and the first work function metal from one of the nFET and the pFET, forming (130) a second work function metal on the one of the nFET and the pFET, a thickness of the second work function metal being substantially the same as a thickness of the first work function metal, and removing (140) the sacrificial layer from the other of the nFET and the pFET.

The method 100 may also include forming a high-k dielectric layer on the nFET and the pFET. In this case, the first work function metal and sacrificial layer may be formed on the high-k dielectric layer.

Further, the nFET and pFET may each include a fin (e.g., doped semiconductor fin). In this case, the high-k dielectric layer may be formed on the fins of the nFET and pFET. Further, the first work function metal and sacrificial layer may be formed on the high-k dielectric layer on the fins of the nFET and pFET.

Further, the method 100 may form the gate of the pFET first, and the gate of the nFET second. In this case, the first work function metal may include a pFET work function metal, and the removing (120) of the sacrificial layer and the first work function metal may include masking the pFET and removing the sacrificial layer and the pFET work function metal from the nFET. In addition, the forming (130) of the second work function metal may include forming an nFET work function metal on the nFET, and the removing (140) of the sacrificial layer may include removing the sacrificial layer from the pFET.

Alternatively, the method 100 may form the gate of the nFET first, and the gate of the pFET second. In this case, the first work function metal may include an nFET work function metal, and the removing (120) of the sacrificial layer and the first work function metal may include masking the nFET and removing the sacrificial layer and the nFET work function metal from the pFET. In addition, the forming (130) of the second work function metal may include forming an pFET work function metal on the pFET, and the removing (140) of the sacrificial layer may include removing the sacrificial layer from the nFET.

The method 100 may also include forming a sacrificial cap layer on the sacrificial layer. In this case, the removing (120) of the sacrificial layer and the first work function may include removing the sacrificial cap layer, the sacrificial layer and the first work function metal, and the removing (140) of the sacrificial layer may include removing the sacrificial cap layer and the sacrificial layer.

Further, the forming (130) of the second work function metal may include forming the second work function metal on the nFET and the pFET, masking the one of the nFET and the pFET, and removing the second work function metal on the other of the nFET and the pFET. In this case, the removing (140) of the sacrificial layer may be performed after the removing of the second work function metal.

Further, the second work function metal may be formed such that a portion of the second work function metal overlaps a portion of the first work function metal. In this case, a length of the overlapped portion of the first work function metal may be less than 60 nm.

Alternatively, the second work function metal may be formed such that a gap is formed between the second work function metal and the first work function metal. In this case, a width of the gap may be less than 60 nm. In addition, a common metal layer may be formed on the nFET and the pFET, between and electrically connecting the first and second work function metals.

FIGS. 2A-2C illustrate a semiconductor device 200 a-200 c (e.g., CMOS device), according to an exemplary aspect of the present invention.

In particular, FIG. 2A illustrates a semiconductor device 200 a having an underlapped pattern, according to an exemplary aspect of the present invention.

As illustrated in FIG. 2a , the semiconductor device 200 a includes an n-type field effect transistor (nFET) including a first fin 201 a and a first metal gate 202 a formed on the first fin 201 a, and a p-type field effect transistor (pFET) including a second fin 201 b and a second metal gate 202 b formed on the second fin 201 b.

A thickness of the second metal gate 202 b is substantially the same as a thickness of the first metal gate 202 a. In particular, a thickness of the first and second metal gates 202 a, 202 b may be in a range from 2 nm to 10 nm. A difference in thickness between the first and second metal gates 202 a, 202 b may be no more than 4 nm. Thus, for example, if a thickness of the first metal gate 202 a is 6 nm, then a thickness of the second metal gate 202 b should be in a range from 2 nm to 10 nm, and so on.

Further, the first metal gate may include a material which is different from a material of the second metal gate. For example, the first metal gate may be an nFET metal layer such as Ti, Al, TiAl, TiAlC, and TaAlC or metal stack of TiN/TiAl/TiN, TiN/TiAlC/TiN TiN/TaAlC/TiN, or any combination of TiN layer and Al alloys, and the second metal gate may be a pFET metal such as TiN, TiC, TaN, and W

The semiconductor device 200 a may also include high-k dielectric layer 207 formed between the first metal gate 202 a and the first fin 201 a of the nFET, and between the second metal gate 202 b and the second fin 201 b of the pFET. The high-k dielectric layer 207 may be formed for example of HfO₂ and may have a thickness in a range from 1 nm to 3 nm.

As illustrated in FIG. 200a , the semiconductor device 200 a includes an underlapped configuration so that a gap G formed between the first metal gate 202 a and the second metal gate 202 b. The width of the gap (i.e., a distance separating the first and second metal gates 202 a, 202 b) may be no greater than 60 nm.

In addition, the semiconductor device 200 a may include a common metal layer 204 formed on the first metal gate of the nFET and the second metal gate of the pFET, and in the gap G between the first and second metal gate 202 a, 202 b. The common metal layer 204 may electrically connect the first and second metal gates 202 a, 202 b.

It should be noted that the semiconductor device 200 a having an underlapped pattern may have the same configuration regardless of whether the metal gate 202 a is formed first and the metal gate 202 b is formed second, or the metal gate 202 b is formed first and the metal gate 202 a is formed second.

FIG. 2B illustrates a semiconductor device 200 b having a pFET-first, overlapped pattern, according to an exemplary aspect of the present invention.

As illustrated in FIG. 2B, a configuration of the semiconductor device 200 b is similar to a configuration of the semiconductor device 200 a. However, in the semiconductor device 200 b, there is no gap G formed between the first and second metal gates 202 a, 202 b. Instead, the second metal gate 202 b is formed first (i.e., pFET first), and then the first metal gate 202 a is formed on the second metal gate 202 b, so that a portion 202 a _(O) of the first metal gate 202 a “overlaps” a portion 202 b _(O) of the second metal gate 202 b.

As also illustrated in FIG. 2B, the semiconductor device 200 b may include a remnant 205 _(R) of a sacrificial layer 205 (e.g., an oxide layer) and a remnant 206 _(R) of sacrificial cap layer 206 (e.g., TiN), which are utilized in forming the semiconductor device 200 b. These remnants 205 _(R), 206 _(R) may remain on the second metal gate 202 b and therefore, between the overlapping portion 202 a _(O) and the overlapped portion 202 b _(O).

FIG. 2C illustrates a semiconductor device 200 c having an nFET-first, overlapped pattern, according to an exemplary aspect of the present invention.

As illustrated in FIG. 2C, a configuration of the semiconductor device 200 c is similar to a configuration of the semiconductor device 200 b. However, in the semiconductor device 200 c, the first metal gate 202 a is formed first (i.e., nFET first), and then the second metal gate 202 b is formed on the first metal gate 202 a, so that a portion 202 b _(O) of the second metal gate 202 b “overlaps” a portion 202 a _(O) of the first metal gate 202 a.

As also illustrated in FIG. 2C, the remnants 205 _(R), 206 _(R) remain on the first metal gate 202 a and therefore, between the overlapping portion 202 b _(O) and the overlapped portion 202 a _(O).

FIG. 3 is a flow chart for a method 300 of forming a semiconductor device having a pFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

As illustrated in FIG. 3, the method 300 includes various up stream processing 300 a (e.g., forming a bottom contact, bottom spacer (e.g., SiO₂, SiN), and nFET and pFET fins), forming (e.g., growing) 300 b an oxide layer (e.g., SiO₂) and high-k dielectric layer (e.g., HfO₂), a post-deposition anneal 300 c and reliability anneal 300 d.

The method 300 also includes forming 300 e a pFET work function metal (WFM) (e.g., TiN or a metal stack, etc.), forming 300 f (e.g., by deposition) a sacrificial layer (e.g., oxide) and sacrificial cap layer (e.g., TiN), performing lithography 300 g to open the nFET and strip the pFET WFM/sacrificial layer/sacrificial cap layer, forming 300 h (e.g., by deposition) an nFET WFM stack, performing lithography 300 i to open the pFET and remove (e.g., strip) the nFET WFM and sacrificial cap layer, and removing (e.g., stripping) 300 j the sacrificial layer.

The method 300 may also include forming 300 k (e.g., by deposition) a common metal layer deposition. However, this may be optional. In particular, the forming 300 k of the common metal layer may be utilized with an underlapped configuration in order to electrically connect the first and second metal gates 202 a, 202 b (e.g., see FIG. 2A).

The method 300 may also include recessing 300 l the first and second metal gates to define a VTFET channel, forming 300 m (e.g., by deposition) an encapsulation layer, forming 300 n a top spacer, forming 300 o (e.g., by epitaxial growth) a top source/drain region, forming 300 p a bottom S/D contact, forming 300 q a top S/D contact, and forming 300 r a metallization layer (M1).

It should be noted that the term “deposition” may be understood to include physical vapor deposition (PVD), chemical vapor deposition (CVD) and atomic layer deposition (ALD). In addition, the terms “removing” or “stripping” a layer or part of a layer may be understood to include etching such as wet etching and dry etching.

FIGS. 4A-4Z illustrate a method 400 of forming a semiconductor device with a pFET-first underlapped pattern, according to another exemplary aspect of the present invention.

In particular, FIG. 4A illustrates (e.g., after performing a reliability strip) the forming of a high-k dielectric layer 407 (e.g., HfO₂, etc.) on the bottom spacer 403 (e.g., SiO₂, SiN, etc.), the fins 401 a, 401 b, the oxide layer 419 a, 419 b (e.g., SiO₂), and the hard mask (e.g., SiN) 408 a, 408 b, according to an exemplary aspect of the present invention.

FIG. 4B illustrates the forming of the pFET WFM 402/402 b (e.g., TiN) (e.g., which becomes the metal gate 402 b of the pFET) on the high-k dielectric layer 407, according to an exemplary aspect of the present invention.

FIG. 4C illustrates the forming of the sacrificial layer 405 on the pFET WFM 402/402 b, and the forming of the sacrificial cap layer 406 on the sacrificial layer 405, according to an exemplary aspect of the present invention.

FIG. 4D illustrates the forming of a mask 409 on the pFET, according to an exemplary aspect of the present invention.

FIG. 4E illustrates the removing (e.g., stripping, etching away etc.) of the sacrificial cap layer 406, the sacrificial layer 405, and the pFET WFM 402/402 b on the nFET, according to an exemplary aspect of the present invention.

FIG. 4F illustrates the forming of an nFET WFM stack 402/402 a (which later becomes the metal gate 402 a of the nFET) on the high-k dielectric layer 407 on the nFET, according to an exemplary aspect of the present invention.

FIG. 4G illustrates the forming of a mask 410 on the nFET, according to an exemplary aspect of the present invention.

FIG. 4H illustrates the removing (e.g., stripping, etching away etc.) of the nFET WFM 402/402 a and the sacrificial cap layer 406 on the pFET, forming the metal gate 402 a for the nFET and the metal gate 402 b for the pFET, according to an exemplary aspect of the present invention. It should be noted that the nFET WFM 402/402 a may be etched so as to form the gap G between the metal gates 402 a, 402 b.

FIG. 4I illustrates the removing of the sacrificial layer 405 from the pFET, exposing the metal gate 402 b, according to an exemplary aspect of the present invention.

FIG. 4J illustrates the removing of the mask 410 to expose the metal gate 402 a (e.g., after patterning), according to an exemplary aspect of the present invention.

FIG. 4K illustrates the forming of a common metal layer 411 on the nFET and pFET, and inside the gap G, according to an exemplary aspect of the present invention. The common metal layer 411 may be a pure metal layer or an alloy compound or a metal stack which can be used a conductor. The material could be, but not limited to, TiN and W A thickness of the common metal layer 411 may be in a range from 2 nm to 10 nm. However, the thickness of the common metal layer 411 in the gap G may be greater then (e.g., twice or more) the thickness of the common metal layer 411 on the upper surface of the metal gates 402 a, 402 b.

FIG. 4L illustrates the forming of an organic planarization layer (OPL) 412 on the nFET and pFET, and the recessing of the OPL 412, such as by wet etch (or dry etch), according to an exemplary aspect of the present invention.

FIG. 4M illustrates the recessing of the metal gates 402 a, 402 b by wet etch (or dry etch), according to an exemplary aspect of the present invention. In this process, the hard mask 408 a, 408 b and an upper portion of the fins 401 a, 401 b are exposed.

FIG. 4N illustrates the removal of the OPL 412, exposing the common metal layer 411, according to an exemplary aspect of the present invention.

FIG. 4O illustrates the forming of an encapsulation layer 413 (e.g., SiN) on the nFET and pFET, according to an exemplary aspect of the present invention.

FIG. 4P illustrates the forming of a gap oxide fill 414 (e.g., SiO₂) on the encapsulation layer 413, according to an exemplary aspect of the present invention.

FIG. 4Q illustrates a recessing of the gap oxide fill 414 (e.g., by wet or dry etching) and the forming (e.g., by deposition) of a top spacer 415 (e.g., SiN), according to an exemplary aspect of the present invention.

FIG. 4R illustrates the etching (e.g., dry etching) of the top spacer 415 to form a self-alignment gate and expose the gap oxide fill 414, according to an exemplary aspect of the present invention.

FIG. 4S illustrates the forming of a shared gate protection hard mask 416 on the nFET and pFET, according to an exemplary aspect of the present invention.

FIG. 4T illustrates the etching of the self-alignment gate, to expose the bottom spacer 403, according to an exemplary aspect of the present invention.

FIG. 4U illustrates the forming of a gap oxide fill 418 (e.g., SiO₂), according to an exemplary aspect of the present invention.

FIG. 4V illustrates the planarization (e.g., chemical mechanical planarization (CMP)) of the gap oxide fill 418 to expose a surface of the encapsulation layer 413, according to an exemplary aspect of the present invention.

FIG. 4W illustrates an etching (e.g., nitride and oxide non-selective etch) of the top spacer 415, the gap oxide fill 418, the hard mask 408 a, 408 b, the oxide layer 419 a, 419 b, and the encapsulation layer 413 to expose the upper surface of the fins 401 a, 401 b, according to an exemplary aspect of the present invention.

FIG. 4X illustrates the forming of the epitaxial growth of the top source/drain layers 420 a, 420 b (e.g., n-type epitaxial grown on the nFET and p-type epitaxial growth on the pFET), according to an exemplary aspect of the present invention.

FIG. 4Y illustrates the forming of a top source/drain silicide 421 a, 421 b, and the forming of an oxide fill 422, according to an exemplary aspect of the present invention.

FIG. 4Z illustrates the forming of contacts 423, according to an exemplary aspect of the present invention. It should be noted that the resulting semiconductor device illustrated in FIG. 4Z is the same as the semiconductor device 200 a illustrated in FIG. 2A.

Referring again to FIG. 2B, the method of forming semiconductor device 200 b having a pFET-first, overlapped pattern in FIG. 2B is similar to the method of forming the semiconductor device illustrated in FIGS. 4A-4Z. However, to form the semiconductor device 200 b, referring to FIGS. 4G-4H, the mask 410 is formed to cover the overlapping portions of the nFET WFM 402/402 a, resulting in the formation of the overlapping portion 202 a _(O) and the overlapped portion 202 b _(O).

FIG. 5 is a flow chart for a method 500 of forming a semiconductor device having nFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

As illustrated in FIG. 5, the method 500 includes various up stream processing 500 a (e.g., forming a bottom contact, bottom spacer (e.g., SiO₂, SiN), and nFET and pFET fins), forming (e.g., growing) 500 b an oxide layer (e.g., SiO₂) and high-k dielectric layer (e.g., HfO₂), a post-deposition anneal 500 c and reliability anneal 500 d.

The method 500 also includes forming 500 e an nFET WFM stack, forming 500 f (e.g., by deposition) a sacrificial layer (e.g., oxide) and sacrificial cap layer (e.g., TiN), performing lithography 500 g to open the pFET and strip the nFET WFM/sacrificial layer/sacrificial cap layer, forming 500 h (e.g., by deposition) a pFET WFM (e.g., TiN or a metal stack, etc.), performing lithography 500 i to open the nFET and remove (e.g., strip) the pFET WFM and sacrificial cap layer, and removing (e.g., stripping) 500 j the sacrificial layer.

The method 500 may also include forming 500 k (e.g., by deposition) a common metal layer deposition. However, this may be optional. In particular, the forming 500 k of the common metal layer may be utilized with an underlapped configuration in order to electrically connect the first and second metal gates 202 a, 202 b (e.g., see FIG. 2A).

The method 500 may also include recessing 5001 the first and second metal gates to define a VTFET channel, forming 500 m (e.g., by deposition) an encapsulation layer, forming 500 n a top spacer, forming 500 o (e.g., by epitaxial growth) a top source/drain region, forming 500 p a bottom S/D contact, forming 500 q a top S/D contact, and forming 500 r a metallization layer (M1).

Again, it should be noted that the semiconductor device having an underlapped pattern (as opposed to an overlapped pattern) may have the same configuration regardless of whether the metal gate 402 a is formed first and the metal gate 402 b is formed second, or the metal gate 402 b is formed first and the metal gate 402 a is formed second. That is, the configuration of a semiconductor device having a pFET-first underlapped pattern may be the same as the configuration of a semiconductor device having an nFET-first underlapped pattern.

Referring again to FIG. 2C, the method of forming semiconductor device 200 c having a nFET-first, overlapped pattern in FIG. 2C is similar to the method of forming the semiconductor device illustrated in FIGS. 4A-4Z, except that 1) the nFET WFM 402/402 a is formed before the pFET WFM 402/402 b, and 2) referring to FIGS. 4G-4H, the mask 410 is formed to cover the overlapping portions of the pFET WFM 402/402 b, resulting in the formation of the overlapping portion 202 b _(O) and the overlapped portion 202 a _(O).

FIG. 6 is a flow chart for a method 600 of forming a semiconductor device having a pFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

As illustrated in FIG. 6, the method 600 includes various up stream processing 600 a (e.g., forming a bottom contact, bottom spacer (e.g., SiO₂, SiN), and nFET and pFET fins), forming (e.g., growing) 600 b an oxide layer (e.g., SiO₂) and high-k dielectric layer (e.g., HfO₂), a post-deposition anneal 600 c and reliability anneal 600 d.

The method 600 also includes forming 600 e a pFET work function metal (WFN) (e.g., TiN or a metal stack, etc.), forming 600 f (e.g., by deposition) a sacrificial layer (e.g., amorphous-Si, SiGe, etc.) and sacrificial cap layer (e.g., TiN), performing lithography 600 g to open the nFET and strip the sacrificial cap layer off the nFET using a photoresist or OPL, removing 600 h the photoresist or OPL, removing 600 i the sacrificial cap layer from the pFET, and the sacrificial layer and pFET WFM from the nFET, forming 600 j (e.g., by deposition) an nFET WFM stack, performing lithography 600 k to open the pFET and remove (e.g., strip) the nFET WFM from the pFET, and removing (e.g., stripping) 6001 the sacrificial layer from the pFET.

The method 600 may also include forming 600 m (e.g., by deposition) a common metal layer deposition. However, this may be optional. In particular, the forming 600 m of the common metal layer may be utilized with an underlapped configuration in order to electrically connect the metal gates of the pFET and nFET (e.g., the first and second metal gates 202 a, 202 b in FIG. 2A).

The method 600 may also include recessing 600 n the first and second metal gates to define a VTFET channel, forming 600 o (e.g., by deposition) an encapsulation layer, forming 600 p a top spacer, forming 600 q (e.g., by epitaxial growth) a top source/drain region, forming 600 r a bottom S/D contact, forming 600 s a top S/D contact, and forming 600 t a metallization layer (M1).

Again, it should be noted that the semiconductor device having an underlapped pattern (as opposed to an overlapped pattern) may have the same configuration regardless of whether the metal gate of the nFET (e.g., 402 a) is formed first and the metal gate of the pFET (e.g., 402 b) is formed second, or the metal gate of the pFET is formed first and the metal gate of the nFET is formed second. That is, the configuration of a semiconductor device having a pFET-first underlapped pattern may be the same as the configuration of a semiconductor device having an nFET-first underlapped pattern.

FIGS. 7A-7Z illustrate a method 700 of forming a semiconductor device with a pFET-first underlapped pattern, according to another exemplary aspect of the present invention.

In particular, FIG. 7A illustrates (e.g., after performing a reliability strip) the forming of a high-k dielectric layer 707 (e.g., HfO₂, etc.) on the bottom spacer 703 (e.g., SiO₂, SiN, etc.), the fins 701 a, 701 b, the oxide layer 719 a, 719 b (e.g., SiO₂), and the hard mask (e.g., SiN) 708 a, 708 b, according to an exemplary aspect of the present invention.

FIG. 7B illustrates the forming of the pFET WFM 702/702 b (e.g., TiN) (e.g., which becomes the metal gate 702 b of the pFET) on the high-k dielectric layer 707, according to an exemplary aspect of the present invention.

FIG. 7C illustrates the forming of the sacrificial layer 705 on the pFET WFM 702/702 b, and the forming of the sacrificial cap layer 706 on the sacrificial layer 705, according to an exemplary aspect of the present invention. It should be noted that the sacrificial layer 705 in this embodiment may be, for example, amorphous-Si or SiGe.

FIG. 7D illustrates the forming of a mask 709 (e.g., photoresist or OPL) on the pFET, according to an exemplary aspect of the present invention.

FIG. 7E illustrates the removing (e.g., stripping, etching away etc.) of the sacrificial cap layer 706 on the nFET, according to an exemplary aspect of the present invention.

FIG. 7F illustrates the removing of the mask 709 to expose the sacrificial cap layer 706 on the pFET, according to an exemplary aspect of the present invention.

FIG. 7G illustrates the removing of the sacrificial cap layer 706 from the pFET to expose the sacrificial layer 705, and removing the sacrificial layer and pFET WFM from the nFET to expose the high-k dielectric layer 707, according to an exemplary aspect of the present invention.

FIG. 7H illustrates the forming of the nFET WFM 702/702 a on the nFET and pFET, according to an exemplary aspect of the present invention.

FIG. 7I illustrates the forming a mask 710 on the nFET, according to an exemplary aspect of the present invention.

FIG. 7J illustrates the removing (e.g., stripping, etching away etc.) of the nFET WFM 702/702 a on the pFET, according to an exemplary aspect of the present invention. It should be noted that the nFET WFM 702/702 a may be etched so as to form the gap G between the metal gates 702 a, 702 b.

FIG. 7K illustrates the removing of the mask 710 to expose the metal gate 702 a (e.g., after patterning), according to an exemplary aspect of the present invention.

FIG. 7L illustrates the removing of the sacrificial layer 705 on the pFET to expose the metal gate 702 b, according to an exemplary aspect of the present invention.

FIG. 7M illustrates the forming of a common metal layer 711 on the nFET and pFET, and inside the gap according to an exemplary aspect of the present invention. The common metal layer 411 may be a pure metal layer or an alloy compound or a metal stack which can be used a conductor. The material could be, but not limited to, TiN and W. A thickness of the common metal layer 711 may be in a range from 2 nm to 10 nm. However, the thickness of the common metal layer 711 in the gap G may be greater then (e.g., twice or more) the thickness of the common metal layer 711 on the upper surface of the metal gates 702 a, 702 b.

FIG. 7N illustrates the device formed by the method 700 after formation of the contacts 723, according to an exemplary aspect of the present invention. It should be noted that a structure of the device formed by the method 700 may be substantially the same as the structure of the device 200 a illustrated in FIG. 2A.

FIG. 7O illustrates a semiconductor device 750 having a pFET-first, overlapped pattern, according to an exemplary aspect of the present invention. The semiconductor device 750 may be formed by a method similar to the method 700 illustrated in FIGS. 7A-7N. However, to form the semiconductor device 750, referring to FIGS. 7I-7J, the mask 710 is formed to cover the overlapping portions of the nFET WFM 702/702 a, resulting in the formation of the overlapping portion 702 a _(O) and the overlapped portion 702 b _(O).

That is, a configuration of the semiconductor device 750 is similar to a configuration of the semiconductor device in FIG. 7N. However, in the semiconductor device 750, there is no gap G formed between the first and second metal gates 702 a, 702 b. Instead, the second metal gate 702 b is formed first (i.e., pFET first), and then the first metal gate 702 a is formed on the second metal gate 702 b, so that a portion 702 a _(O) of the first metal gate 702 a “overlaps” a portion 702 b _(O) of the second metal gate 702 b.

As also illustrated in FIG. 7O, the semiconductor device 750 may include a remnant 705 ₈ of a sacrificial layer 705 (e.g., amorphous-Si or SiGe etc) which are utilized in forming the semiconductor device 750. This remnants 705 ₈ may remain on the second metal gate 702 b and therefore, between the overlapping portion 702 a _(O) and the overlapped portion 702 b _(O).

FIG. 8 is a flow chart for a method 800 of forming a semiconductor device having an nFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

As illustrated in FIG. 8, the method 800 includes various up stream processing 800 a (e.g., forming a bottom contact, bottom spacer (e.g., SiO₂, SiN), and nFET and pFET fins), forming (e.g., growing) 800 b an oxide layer (e.g., SiO₂) and high-k dielectric layer (e.g., HfO₂), a post-deposition anneal 800 c and reliability anneal 800 d.

The method 800 also includes forming 800 e an nFET WFM stack, forming 800 f (e.g., by deposition) a sacrificial layer (e.g., amorphous-Si, SiGe, etc.) and sacrificial cap layer (e.g., TiN or oxide), performing lithography 800 g to open the pFET and strip the sacrificial cap layer off the pFET using a photoresist or OPL, removing 800 h the photoresist or OPL, removing 800 i the sacrificial cap layer from the nFET, and the sacrificial layer and nFET WFM from the pFET, forming 800 j (e.g., by deposition) a pFET WFM stack (e.g., TiN, metal stack, etc.), performing lithography 800 k to open the nFET and remove (e.g., strip) the pFET WFM from the nFET, and removing (e.g., stripping) 8001 the sacrificial layer from the nFET.

The method 800 may also include forming 800 m (e.g., by deposition) a common metal layer deposition. However, this may be optional. In particular, the forming 800 m of the common metal layer may be utilized with an underlapped configuration in order to electrically connect the metal gates of the pFET and nFET (e.g., the first and second metal gates 202 a, 202 b in FIG. 2A).

The method 800 may also include recessing 800 n the first and second metal gates to define a VTFET channel, forming 800 o (e.g., by deposition) an encapsulation layer, forming 800 p a top spacer, forming 800 q (e.g., by epitaxial growth) a top source/drain region, forming 800 r a bottom S/D contact, forming 800 s a top S/D contact, and forming 800 t a metallization layer (M1).

As noted above, the configuration of a semiconductor device having a pFET-first underlapped pattern may be the same as the configuration of a semiconductor device having an nFET-first underlapped pattern. Therefore, semiconductor device having an nFET-first underlapped pattern formed by the method 800 would have the same configuration as the semiconductor device illustrated in FIG. 7N.

FIG. 9 illustrates a semiconductor device 700 having an nFET-first, overlapped pattern, according to an exemplary aspect of the present invention.

The semiconductor device 900 may be formed by a method similar to the method 700 illustrated in FIGS. 7A-7N. However, to form the semiconductor device 900 the nFET WFM 702/702 a would be formed before the pFET WFM 702/702 b (e.g., as described in the flowchart of FIG. 8). In addition, referring to FIGS. 7I-7J, to form the semiconductor device 900, the mask 710 would formed to cover the overlapping portions of the pFET WFM 702/702 b, resulting in the formation of the overlapping portion 702 b _(O) of the metal gate 702 b and the overlapped portion 702 a _(O) of the metal gate 702 a.

That is, a configuration of the semiconductor device 900 is similar to a configuration of the semiconductor device in FIG. 7N. However, in the semiconductor device 900, there is no gap G formed between the first and second metal gates 902 a, 902 b. Instead, the second metal gate 902 b is formed first (i.e., pFET first), and then the first metal gate 902 a is formed on the second metal gate 902 b, so that a portion 902 a _(O) of the first metal gate 902 a “overlaps” a portion 902 b _(O) of the second metal gate 902 b.

As also illustrated in FIG. 9, the semiconductor device 900 may include a remnant 905 _(R) of a sacrificial layer (e.g., amorphous-Si or SiGe etc) (e.g., sacrificial layer 705) which is utilized in forming the semiconductor device 900. This remnant 905 _(R) may remain on the second metal gate 902 b and therefore, between the overlapping portion 902 b _(O) and the overlapped portion 902 a _(O).

FIG. 10 is a flow chart for a method 1000 of forming a semiconductor device having a pFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

As illustrated in FIG. 10, the method 1000 includes various up stream processing 1000 a (e.g., forming a bottom contact, bottom spacer (e.g., SiO₂, SiN), and nFET and pFET fins), forming (e.g., growing) 1000 b an oxide layer (e.g., SiO₂) and high-k dielectric layer (e.g., HfO₂), a post-deposition anneal 1000 c and reliability anneal 1000 d.

The method 1000 also includes forming 1000 e a pFET work function metal (WFM) (e.g., TiN or a metal stack, etc.), forming 1000 f (e.g., by deposition) a sacrificial layer (e.g., oxide). It should be noted that no sacrificial cap layer is utilized in the method 1000.

The method 1000 also includes performing lithography 1000 g to open the nFET and strip the pFET WFM and sacrificial layer off the nFET, forming 1000 h (e.g., by deposition) an nFET WFM stack, performing lithography 1000 i to open the pFET and remove (e.g., strip) the nFET WFM and sacrificial cap layer off the pFET, and removing (e.g., stripping) 1000 j the sacrificial layer off the pFET.

The method 1000 may also include forming 1000 k (e.g., by deposition) a common metal layer deposition. However, this may be optional. In particular, the forming 1000 k of the common metal layer may be utilized with an underlapped configuration in order to electrically connect the metal gates of the pFET and nFET (e.g., first and second metal gates 202 a, 202 b (e.g., see FIG. 2A)).

The method 1000 may also include recessing 10001 the first and second metal gates to define a VTFET channel, forming 1000 m (e.g., by deposition) an encapsulation layer, forming 1000 n a top spacer, forming 1000 o (e.g., by epitaxial growth) a top source/drain region, forming 1000 p a bottom S/D contact, forming 1000 q a top S/D contact, and forming 1000 r a metallization layer (M1).

The method 1000 may be used to form a semiconductor device having an underlapped pattern (i.e., where a gap (e.g., gap Gin FIG. 2A) is formed between the metal gate of the nFET and the metal gate of the pFET). In that case, the semiconductor device would have a configuration which is similar to the configuration of the semiconductor device illustrated in FIGS. 2A, 4Z and 7N.

Alternatively, the method 1000 may be used to form a semiconductor device having a pFET-first overlapped pattern. In that case, the semiconductor device would have a configuration which is similar to the configuration of the semiconductor device illustrated in FIG. 7O except that the remaining material is oxide instead of a-Si or SiGe.

FIG. 11 is a flow chart for a method 1100 of forming a semiconductor device having nFET first pattern (underlapped or overlapped), according to another exemplary aspect of the present invention.

As illustrated in FIG. 11, the method 1100 includes various up stream processing 1100 a (e.g., forming a bottom contact, bottom spacer (e.g., SiO₂, SiN), and nFET and pFET fins), forming (e.g., growing) 1100 b an oxide layer (e.g., SiO₂) and high-k dielectric layer (e.g., HfO₂), a post-deposition anneal 1100 c and reliability anneal 1100 d.

The method 1100 also includes forming 1100 e an nFET WFM stack, and forming 1100 f (e.g., by deposition) a sacrificial layer (e.g., oxide).). It should be noted that no sacrificial cap layer is utilized in the method 1100.

The method 1100 also includes performing lithography 1100 g to open the pFET and strip the nFET WFM and sacrificial layer off the pFET, forming 1100 h (e.g., by deposition) a pFET WFM (e.g., TiN or a metal stack, etc.), performing lithography 1100 i to open the nFET and remove (e.g., strip) the pFET WFM off the nFET, and removing (e.g., stripping) 1100 j the sacrificial layer

The method 1100 may also include forming 1100 k (e.g., by deposition) a common metal layer deposition. However, this may be optional. In particular, the forming 1100 k of the common metal layer may be utilized with an underlapped configuration in order to electrically connect the first and second metal gates 202 a, 202 b (e.g., see FIG. 2A).

The method 1100 may also include recessing 11001 the first and second metal gates to define a VTFET channel, forming 1100 m (e.g., by deposition) an encapsulation layer, forming 1100 n a top spacer, forming 1100 o (e.g., by epitaxial growth) a top source/drain region, forming 1100 p a bottom S/D contact, forming 1100 q a top S/D contact, and forming 1100 r a metallization layer (M1).

The method 1100 may be used to form a semiconductor device having an underlapped pattern (i.e., where a gap (e.g., gap Gin FIG. 2A) is formed between the metal gate of the nFET and the metal gate of the pFET). In that case, the semiconductor device would have a configuration which is similar to the configuration of the semiconductor device illustrated in FIGS. 2A, 4Z and 7N.

Alternatively, the method 1100 may be used to form a semiconductor device having an nFET-first overlapped pattern. In that case, the semiconductor device would have a configuration which is similar to the configuration of the semiconductor device illustrated in FIG. 7O except that the remaining material is oxide instead of a-Si or SiGe.

With its unique and novel features, the exemplary aspects of the present invention may provide a semiconductor device in which a thickness of a metal gate of an nFET (e.g., metal gate 202 a) is substantially the same as a thickness of a metal gate of the pFET (e.g., metal gate 202 b).

While the invention has been described in terms of one or more embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the appended claims. Specifically, one of ordinary skill in the art will understand that the drawings herein are meant to be illustrative, and the design of the inventive method and system is not limited to that disclosed herein but may be modified within the spirit and scope of the present invention.

Further, Applicant's intent is to encompass the equivalents of all claim elements, and no amendment to any claim the present application should be construed as a disclaimer of any interest in or right to an equivalent of any element or feature of the amended claim. 

What is claimed is:
 1. A semiconductor device, comprising: an n-type field effect transistor (nFET) including a first fin and a first metal gate formed on the first fin; and a p-type field effect transistor (pFET) including a second fin and a second metal gate formed on the second fin, a thickness of the second metal gate being substantially the same as a thickness of the first metal gate, wherein a portion of one of the first and second metal gates overlaps a portion of the other of the first and second metal gates.
 2. The semiconductor device of claim 1, wherein the first metal gate comprises a material which is different from a material of the second metal gate.
 3. The semiconductor device of claim 1, further comprising: a high-k dielectric layer between the first metal gate and the first fin of the nFET, and between the second metal gate and the second fin of the pFET.
 4. The semiconductor device of claim 1, further comprising: a common metal layer formed on the first metal gate of the nFET and the second metal gate of the pFET.
 5. The semiconductor device of claim 1, wherein the common metal layer electrically connects the first metal gate of the nFET and the second metal gate of the pFET.
 6. The semiconductor device of claim 4, wherein the common metal layer is formed in a gap between the first metal gate of the nFET and the second metal gate of the pFET.
 7. The semiconductor device of claim 6, wherein a width of the gap is less than 60 nm.
 8. The semiconductor device of claim 1, wherein the portion of the one of the first and second metal gates overlaps the portion of the other of the first and second metal gates at a location between the first and second fins.
 9. The semiconductor device of claim 1, wherein a length of the overlapped portion of the other of the first and second metal gates is less than 60 nm.
 10. A method of forming a semiconductor device, comprising: forming an n-type field effect transistor (nFET) including a first fin and a first metal gate formed on the first fin; and forming a p-type field effect transistor (pFET) including a second fin and a second metal gate formed on the second fin, a thickness of the second metal gate being substantially the same as a thickness of the first metal gate, wherein a portion of one of the first and second metal gates overlaps a portion of the other of the first and second metal gates.
 11. The method of claim 10, wherein the first metal gate comprises a material which is different from a material of the second metal gate.
 12. The method of claim 10, further comprising: a high-k dielectric layer between the first metal gate and the first fin of the nFET, and between the second metal gate and the second fin of the pFET.
 13. The method of claim 10, further comprising: a common metal layer formed on the first metal gate of the nFET and the second metal gate of the pFET.
 14. The method of claim 13, wherein the common metal layer electrically connects the first metal gate of the nFET and the second metal gate of the pFET.
 15. The method of claim 14, wherein the common metal layer is formed in a gap between the first metal gate of the nFET and the second metal gate of the pFET.
 16. The method of claim 15, wherein a width of the gap is less than 60 nm.
 17. The method of claim 10, wherein a portion of one of the first and second metal gates overlaps a portion of the other of the first and second metal gates.
 18. The method of claim 17, wherein a length of the overlapped portion of the other of the first and second metal gates is less than 60 nm.
 19. A semiconductor device, comprising: an n-type field effect transistor (nFET) including a first fin and a first metal gate formed on the first fin; a p-type field effect transistor (pFET) including a second fin and a second metal gate formed on the second fin, a thickness of the second metal gate being substantially the same as a thickness of the first metal gate, the first metal gate comprising a material which is different from a material of the second metal gate; and a high-k dielectric layer between the first metal gate and the first fin of the nFET, and between the second metal gate and the second fin of the pFET, wherein a portion of one of the first and second metal gates overlaps a portion of the other of the first and second metal gates.
 20. The semiconductor device of claim 19, further comprising: a common metal layer formed on the first metal gate of the nFET and the second metal gate of the pFET, and in a gap between the first metal gate of the nFET and the second metal gate of the pFET, the common metal layer electrically connecting the first metal gate of the nFET and the second metal gate of the pFET. 